PART |
Description |
Maker |
MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
IS43DR86400 IS46DR16320 IS43DR16320 |
512Mb (x8, x16) DDR2 SDRAM Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
EBE51ED8ABFA-5C-E EBE51ED8ABFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) KPT SERIES 512MB的无缓冲DDR2 SDRAM DIMM内存400字72位,1个等级)
|
Elpida Memory, Inc.
|
UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM x4 SDRAM x4内存 x16 SDRAM x16内存
|
NEC, Corp. Infineon Technologies AG
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|